N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.

N channel vertical power FET in Smart SIPMOS® chip on chip technology. Providing embedded protection functions.

N channel vertical power FET in Smart SIPMOS® chip on chip technology. Providing embedded protection functions.

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.

The BTS3028SDL is a single channel low-side MOSFET power switch in PG-T0252-3-11 package providing embedded protective functions. The device is monolithically integrated with a N channel vertical power FET and embedded protection functions. The BTS3028SDL is automotive qualified and can be used in 12V and 24V automotive and industrial applications.

The BTS3028SDR is a single channel low-side MOSFET power switch in PG-T0252-3-11 package providing embedded protective functions. The device is monolithically integrated with a N channel vertical power FET and embedded protection functions. The BTS3028SDR is automotive qualified and can be used in 12V and 24V automotive and industrial applications

The BTS3104SDL is a single channel low-side MOSFET power switch in PG-T0252-3-11 package providing embedded protective functions. The device is monolithically integrated with a N channel vertical power FET and embedded protection functions. The BTS3104SDL is automotive qualified and can be used in 12V and 24V automotive and industrial applications.

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.

The BTS3160D is a latching one channel low-side power switch in PG-TO-252-5-13 package providing embedded protective functions. The power transistor is build by a N-channel vertical power MOSFET. The device is controlled by a control chip in Smart Power Technology.The device is able to switch all kind of resistive, inductive and capacitive loads. For lamp loads the lamp-inrush-current, eight- to ten-times the nominal current, has to be considered. The maximal inrush current has to be below the minimum short circuit shutdown current.