Infineon
igbt discrete
Infineon
IGW75N65H5XKSA1
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.
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Infineon
IHW30N135R3FKSA1
The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs.
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Infineon
IKA08N65H5XKSA1
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.
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Infineon
IKB10N60TATMA1
Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
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Infineon
IKD03N60RFATMA1
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives.
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Infineon
IKD06N60RATMA1
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives.
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Infineon
IKP04N60TXKSA1
Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
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Infineon
IKP08N65F5XKSA1
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.
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Infineon
IKP20N65F5XKSA1
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.
Request Model
Infineon
IKP20N65H5XKSA1
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.
Request Model