As a successor of the TLE6251G, the TLE6251-2G is designed to provide an excellent passive behavior in Power Down. This feature makes the TLE6251-2G extremely suitable for mixed power supply HS-CAN networks. The TLE6251-2G provides different operation modes with a very low quiescent current in Sleep mode. Based on the high symmetry of the CANH and CANL signals, the TLE6251-2G provides a very low level of electromagnetic emission (EME) within a broad frequency range. The TLE6251-2G is integrated in a RoHS compliant PG-DSO-14 package and fulfills or exceeds the requirements of the ISO11898-5. The TLE6251G and the TLE6251-2G are fully pin compatible and function compatible. Based on the Infineon Smart Power Technology SPT®, the TLE6251-2G provides industry leading ESD robustness together with a very high electromagnetic immunity (EMI). The Infineon Smart Power Technology SPT® allows bipolar and CMOS control circuitry in accordance with DMOS power devices to exist on the same monolithic circuit. The TLE6251-2G and the Infineon SPT® technology are AEC qualified and tailored to withstand the harsh conditions of the automotive environment.

As a successor of the TLE6251G, the TLE6251-3G is designed to provide an excellent passive behavior in Power Down . This feature makes the TLE6251-3G extremely suitable for mixed power supply HS-CAN networks. The TLE6251-3G provides different operation modes with a very low quiescent current in Sleep mode. Based on the high symmetry of the CANH and CANL signals, the TLE6251-3G provides a very low level of electromagnetic emission (EME) within a broad frequency range. The TLE6251-3G is integrated in a RoHS compliant PG-DSO-14 package and fulfills or exceeds the requirements of the ISO11898-5. The TLE6251G and the TLE6251-3G are fully pin compatible and function compatible. Based on the Infineon Smart Power Technology SPT®, the TLE6251-3G provides industry leading ESD robustness together with a very high electromagnetic immunity (EMI). The Infineon Smart Power Technology SPT® allows bipolar and CMOS control circuitry in accordance with DMOS power devices to exist on the same monolithic circuit. The TLE6251-3G and the Infineon SPT® technology are AEC qualified and tailored to withstand the harsh conditions of the automotive environment

As a successor of the TLE6251G, the TLE6251-3G is designed to provide an excellent passive behavior in Power Down . This feature makes the TLE6251-3G extremely suitable for mixed power supply HS-CAN networks. The TLE6251-3G provides different operation modes with a very low quiescent current in Sleep mode. Based on the high symmetry of the CANH and CANL signals, the TLE6251-3G provides a very low level of electromagnetic emission (EME) within a broad frequency range. The TLE6251-3G is integrated in a RoHS compliant PG-DSO-14 package and fulfills or exceeds the requirements of the ISO11898-5. The TLE6251G and the TLE6251-3G are fully pin compatible and function compatible. Based on the Infineon Smart Power Technology SPT®, the TLE6251-3G provides industry leading ESD robustness together with a very high electromagnetic immunity (EMI). The Infineon Smart Power Technology SPT® allows bipolar and CMOS control circuitry in accordance with DMOS power devices to exist on the same monolithic circuit. The TLE6251-3G and the Infineon SPT® technology are AEC qualified and tailored to withstand the harsh conditions of the automotive environment