Infineon
Discrete IGBT without Anti-Parallel Diode
Infineon
SGD02N60BUMA1
Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies.
Models Available
Infineon
IGB01N120H2ATMA1
Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies.
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Infineon
IGB03N120H2ATMA1
Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies.
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Infineon
IGB10N60TATMA1
Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
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Infineon
IGB20N60H3ATMA1
Infineon’s high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.
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Infineon
IGB30N60H3ATMA1
Infineon’s high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.
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Infineon
IGB30N60TATMA1
Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Request Model
Infineon
IGD06N60TATMA1
Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Request Model
Infineon
IGP06N60TXKSA1
Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Request Model