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  3. Diodes
  4. SiC Schottky barrier diode

Toshiba Electronic Devices & Storage Corp.

SiC Schottky barrier diode

Toshiba offers 650-V silicon carbide Schottky barrier diodes (SiC SBDs) with a rated current of 2 A to 10 A.

Toshiba Electronic Devices & Storage Corp.
Toshiba Electronic Devices & Storage Corp.
TRS8E65F
650 V/8 A SiC Schottky Barrier Diode, TO-220-2L
Models Available
Toshiba Electronic Devices & Storage Corp.
Toshiba Electronic Devices & Storage Corp.
TRS10A65C
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Toshiba Electronic Devices & Storage Corp.
Toshiba Electronic Devices & Storage Corp.
TRS10E65C
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Toshiba Electronic Devices & Storage Corp.
Toshiba Electronic Devices & Storage Corp.
TRS12A65C
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Toshiba Electronic Devices & Storage Corp.
Toshiba Electronic Devices & Storage Corp.
TRS12E65C
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Toshiba Electronic Devices & Storage Corp.
Toshiba Electronic Devices & Storage Corp.
TRS15H120H
1200 V/15 A SiC Schottky Barrier Diode, TO-247-2L
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Toshiba Electronic Devices & Storage Corp.
Toshiba Electronic Devices & Storage Corp.
TRS16A65C
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Toshiba Electronic Devices & Storage Corp.
Toshiba Electronic Devices & Storage Corp.
TRS20J120C
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Toshiba Electronic Devices & Storage Corp.
Toshiba Electronic Devices & Storage Corp.
TRS6E65C
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Toshiba Electronic Devices & Storage Corp.
Toshiba Electronic Devices & Storage Corp.
TRS8A65C
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