SiC Schottky barrier diode

Toshiba offers 650-V silicon carbide Schottky barrier diodes (SiC SBDs) with a rated current of 2 A to 10 A.

Toshiba Electronic Devices & Storage Corp.

Toshiba Electronic Devices & Storage Corp.

TRS6V65H

650 V/6 A SiC Schottky Barrier Diode, DFN8×8

Models Available

Toshiba Electronic Devices & Storage Corp.

Toshiba Electronic Devices & Storage Corp.

TRS4V65H

650 V/4 A SiC Schottky Barrier Diode, DFN8×8

Models Available

Toshiba Electronic Devices & Storage Corp.

Toshiba Electronic Devices & Storage Corp.

TRS12V65H

650 V/12 A SiC Schottky Barrier Diode, DFN8×8

Models Available

Toshiba Electronic Devices & Storage Corp.

Toshiba Electronic Devices & Storage Corp.

TRS10V65H

650 V/10 A SiC Schottky Barrier Diode, DFN8×8

Models Available

Toshiba Electronic Devices & Storage Corp.

Toshiba Electronic Devices & Storage Corp.

TRS8E65H

650 V/8 A SiC Schottky Barrier Diode, TO-220-2L

Models Available

Toshiba Electronic Devices & Storage Corp.

Toshiba Electronic Devices & Storage Corp.

TRS6E65H

650 V/6 A SiC Schottky Barrier Diode, TO-220F-2L

Models Available

Toshiba Electronic Devices & Storage Corp.

Toshiba Electronic Devices & Storage Corp.

TRS4E65H

650 V/4 A SiC Schottky Barrier Diode, TO-220-2L

Models Available

Toshiba Electronic Devices & Storage Corp.

Toshiba Electronic Devices & Storage Corp.

TRS3E65H

650 V/3 A SiC Schottky Barrier Diode, TO-220-2L

Models Available

Toshiba Electronic Devices & Storage Corp.

Toshiba Electronic Devices & Storage Corp.

TRS2E65H

650 V/2 A SiC Schottky Barrier Diode, TO-220-2L

Models Available

Toshiba Electronic Devices & Storage Corp.

Toshiba Electronic Devices & Storage Corp.

TRS12E65H

650 V/12 A SiC Schottky Barrier Diode, TO-220-2L

Models Available