SiC Schottky barrier diode

Toshiba offers 650-V silicon carbide Schottky barrier diodes (SiC SBDs) with a rated current of 2 A to 10 A.

Toshiba Electronic Devices & Storage Corp.

Toshiba Electronic Devices & Storage Corp.

TRS12N65FB

650 V/12 A SiC Schottky Barrier Diode, TO-247

Models Available

Toshiba Electronic Devices & Storage Corp.

Toshiba Electronic Devices & Storage Corp.

TRS12E65F

650 V/12 A SiC Schottky Barrier Diode, TO-220-2L

Models Available

Toshiba Electronic Devices & Storage Corp.

Toshiba Electronic Devices & Storage Corp.

TRS12A65F

650 V/12 A SiC Schottky Barrier Diode, TO-220F-2L

Models Available

Toshiba Electronic Devices & Storage Corp.

Toshiba Electronic Devices & Storage Corp.

TRS10A65F,S1Q(S2

650 V/10 A SiC Schottky Barrier Diode, TO-220F-2L

Models Available

Toshiba Electronic Devices & Storage Corp.

Toshiba Electronic Devices & Storage Corp.

TRS10A65F

650 V/10 A SiC Schottky Barrier Diode, TO-220F-2L

Models Available

Toshiba Electronic Devices & Storage Corp.

Toshiba Electronic Devices & Storage Corp.

TRS6E65F

650 V/6 A SiC Schottky Barrier Diode, TO-220-2L

Models Available

Toshiba Electronic Devices & Storage Corp.

Toshiba Electronic Devices & Storage Corp.

TRS4E65F

650 V/4 A SiC Schottky Barrier Diode, TO-220-2L

Models Available

Toshiba Electronic Devices & Storage Corp.

Toshiba Electronic Devices & Storage Corp.

TRS3E65F

650 V/3 A SiC Schottky Barrier Diode, TO-220-2L

Models Available

Toshiba Electronic Devices & Storage Corp.

Toshiba Electronic Devices & Storage Corp.

TRS2E65F

650 V/2 A SiC Schottky Barrier Diode, TO-220-2L

Models Available

Toshiba Electronic Devices & Storage Corp.

Toshiba Electronic Devices & Storage Corp.

TRS10E65F

650 V/10 A SiC Schottky Barrier Diode, TO-220-2L

Models Available