Toshiba Electronic Devices & Storage Corp.
SiC Schottky barrier diode
Toshiba offers 650-V silicon carbide Schottky barrier diodes (SiC SBDs) with a rated current of 2 A to 10 A.
Toshiba Electronic Devices & Storage Corp.
TRS8A65F,S1Q(S2
650 V/8 A SiC Schottky Barrier Diode, TO-220F-2L
Models Available
Toshiba Electronic Devices & Storage Corp.
TRS6A65F,S1Q(S2
650 V/6 A SiC Schottky Barrier Diode, TO-220F-2L
Models Available
Toshiba Electronic Devices & Storage Corp.
TRS4A65F,S1Q(S2
650 V/4 A SiC Schottky Barrier Diode, TO-220F-2L
Models Available
Toshiba Electronic Devices & Storage Corp.
TRS10A65F,S1Q(S2
650 V/10 A SiC Schottky Barrier Diode, TO-220F-2L
Models Available