Toshiba Electronic Devices & Storage Corp.
SiC Schottky barrier diode
Toshiba offers 650-V silicon carbide Schottky barrier diodes (SiC SBDs) with a rated current of 2 A to 10 A.
Toshiba Electronic Devices & Storage Corp.
TRS40N120HB
1200 V/40 A SiC Schottky Barrier Diode, TO-247
Models Available
Toshiba Electronic Devices & Storage Corp.
TRS30N120HB
1200 V/30 A SiC Schottky Barrier Diode, TO-247
Models Available
Toshiba Electronic Devices & Storage Corp.
TRS40H120H
1200 V/40 A SiC Schottky Barrier Diode, TO-247-2L
Models Available
Toshiba Electronic Devices & Storage Corp.
TRS30H120H
1200 V/30 A SiC Schottky Barrier Diode, TO-247-2L
Models Available
Toshiba Electronic Devices & Storage Corp.
TRS20H120H
1200 V/20 A SiC Schottky Barrier Diode, TO-247-2L
Models Available
Toshiba Electronic Devices & Storage Corp.
TRS15N120HB
1200 V/15 A SiC Schottky Barrier Diode, TO-247
Models Available
Toshiba Electronic Devices & Storage Corp.
TRS10N120HB
1200 V/10 A SiC Schottky Barrier Diode, TO-247
Models Available
Toshiba Electronic Devices & Storage Corp.
TRS20N120HB
1200 V/20 A SiC Schottky Barrier Diode, TO-247
Models Available
Toshiba Electronic Devices & Storage Corp.
TRS10H120H
1200 V/10 A SiC Schottky Barrier Diode, TO-247-2L
Models Available
Toshiba Electronic Devices & Storage Corp.
TRS8V65H
650 V/8 A SiC Schottky Barrier Diode, DFN8×8
Models Available