Toshiba Electronic Devices & Storage Corp.
Radio-frequency SiGe Heterojunction Bipolar Transistor
Toshiba Electronic Devices & Storage Corp.
MT3S111(TE85L,F)
RF Bipolar Transistor, 6 V, 0.1 A, fT=11.5 GHz, SOT-346(S-Mini)
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Toshiba Electronic Devices & Storage Corp.
MT3S111TU,LF
RF Bipolar Transistor, 6 V, 0.1 A, fT=10 GHz, SOT-323F(UFM)
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Toshiba Electronic Devices & Storage Corp.
MT3S111TU,LXGF
RF Bipolar Transistor, 6 V, 0.1 A, fT=10 GHz, SOT-323F(UFM)
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Toshiba Electronic Devices & Storage Corp.
MT3S113(TE85L,F)
RF Bipolar Transistor, 5.3 V, 0.1 A, fT=12.5 GHz, SOT-346(S-Mini)
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Toshiba Electronic Devices & Storage Corp.
MT3S113TU,LF
RF Bipolar Transistor, 5.3 V, 0.1 A, fT=11.2 GHz, SOT-323F(UFM)
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