Toshiba Electronic Devices & Storage Corp.
Radio-frequency SiGe Heterojunction Bipolar Transistor
Toshiba Electronic Devices & Storage Corp.
MT3S113TU,LF
RF Bipolar Transistor, 5.3 V, 0.1 A, fT=11.2 GHz, SOT-323F(UFM)
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Toshiba Electronic Devices & Storage Corp.
MT4S300U
RF Bipolar Transistor, 4 V, 0.05 A, fT=26.5 GHz, SOT-343(USQ)
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Toshiba Electronic Devices & Storage Corp.
MT4S301U
RF Bipolar Transistor, 4 V, 0.035 A, fT=27.5 GHz, SOT-343(USQ)
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