Toshiba Electronic Devices & Storage Corp.
12V-300V MOSFETs
Toshiba has used each successive generation of trench-gate structures and fabrication processes to steadily reduce the drain-source on-resistance, RDS(ON), of its low-voltage power MOSFETs.
Toshiba has used each successive generation of trench-gate structures and fabrication processes to steadily reduce the drain-source on-resistance, RDS(ON), of its low-voltage power MOSFETs.
