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Power (214)
Bare Die Silicon Carbide MOSFETs (16)
Bare Die Silicon Carbide Schottky Diodes (21)
Discrete Silicon Carbide MOSFETs (54)
Discrete Silicon Carbide Schottky Diodes (79)
Silicon Carbide Power Modules (21)
RF (336)
Aerospace & Defense (258)
Communications Infrastructure (78)
Communications Infrastructure
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PXFC191507FC-V1
High Power RF LDMOS FET 150 W; 28 V; 1805 – 1990 MHz
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PXFC192207FH-V3
High Power RF LDMOS FET 220 W; 28 V; 1805 – 1990 MHz
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PXFE181507FC-V1
High Power RF LDMOS FET 175 W; 28 V; 1805 – 1880 MHz
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PXFE211507FC-V1
High Power RF LDMOS FET 170 W; 28 V; 2110 – 2170 MHz
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WS1A2639-V1
38.5 dBm GaN on SiC Power Amplifier Module; 2496-2690 MHz
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WS1A3640-V1
39.5 dBm GaN on SiC Power Amplifier Module; 3300-3800 MHz
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WS1A3940-V1
39.5 dBm GaN on SiC Power Amplifier Module; 3700-3980 MHz
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WSGPA01-V1
10 W; 5 GHz; GaN on SiC General Purpose Power Amplifier
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