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Power (214)
Bare Die Silicon Carbide MOSFETs (16)
Bare Die Silicon Carbide Schottky Diodes (21)
Discrete Silicon Carbide MOSFETs (54)
Discrete Silicon Carbide Schottky Diodes (79)
Silicon Carbide Power Modules (21)
RF (336)
Aerospace & Defense (258)
Communications Infrastructure (78)
Communications Infrastructure
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GTRA184602FC-V1
High Power RF GaN on SiC HEMT; 460 W; 48 V; 1805 – 1880 MHz
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GTRA214602FC-V1
High Power RF GaN on SiC HEMT; 490 W; 48 V; 2110 – 2170 MHz
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GTRA260502M-V1
High Power RF GaN on SiC HEMT 45 W; 48 V; 2515 – 2675 MHz
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GTRA262802FC-V2
High Power RF GaN on SiC HEMT 250 W; 48 V; 2490 – 2690 MHz
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GTRA263902FC-V2
High Power RF GaN on SiC HEMT 370 W; 48 V; 2495 – 2690 MHz
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GTRA360502M-V1
High Power RF GaN on SiC HEMT 50 W; 48 V; 3400 – 3800 MHz
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GTRA362002FC-V1
High Power RF GaN on SiC HEMT 200 W; 48 V; 3400 – 3600 MHz
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GTRA362802FC-V1
High Power RF GaN on SiC HEMT 280 W; 48 V; 3400 – 3600 MHz
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GTRA364002FC-V1
High Power RF GaN on SiC HEMT 400 W; 48 V; 3400 – 3600 MHz
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GTRA374902FC-V1
High Power RF GaN on SiC HEMT 450 W; 48 V; 3600 – 3700 MHz
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