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Power (214)
Bare Die Silicon Carbide MOSFETs (16)
Bare Die Silicon Carbide Schottky Diodes (21)
Discrete Silicon Carbide MOSFETs (54)
Discrete Silicon Carbide Schottky Diodes (79)
Silicon Carbide Power Modules (21)
RF (336)
Aerospace & Defense (258)
Communications Infrastructure (78)
Communications Infrastructure
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PXAC243502FV-V1
High Power RF LDMOS FET 350 W; 28 V; 2300 – 2400 MHz
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PXAC260602FC-V1
High Power RF LDMOS FET 60 W; P3dB @ 28 V; 2620 – 2690 MHz
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PXAC261002FC-V1
High Power RF LDMOS FET 100 W; 28 V; 2490 – 2690 MHz
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PXAC261212FC-V1
High Power RF LDMOS FET 120 W; 28 V; 2496 – 2690 MHz
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PXAD184218FV-V1
High Power RF LDMOS FET 420 W; 28 V; 1805 – 1880 MHz
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PXAD214218FV-V1
High Power RF LDMOS FET 430 W; 28 V; 2110 – 2170 MHz
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PXAE183708NB-V1
High Power RF LDMOS FET 320 W; 28 V; 1805 – 1880 MHz
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PXAE213708NB-V1
High Power RF LDMOS FET 400 W; 28 V; 2110 – 2200 MHz
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PXAE261908NF-V1
High Power RF LDMOS FET 240 W,28 V, 2515 – 2675 MHz
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PXAE263708NB-V1
High Power RF LDMOS FET 400 W (P3dB); 28 V; 2620 – 2690 MHz
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