1. Infineon
  2. Power
  3. MOSFET
  4. N-Channel

Infineon IQDH29NE2LM5CGATMA1

The power MOSFET IQDH29NE2LM5CG 25 V comes in a PQFN 5x6 mm2 Source-Down package. The part offers the industry’s lowest RDS(on) of 0.29 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS, telecom power, and intermediate bus conversion in high-performance computing, like hyper-scale data centers and AI-server farms.
Built by Infineon

The CAD models below were provided for download to Ultra Librarian by Infineon. All CAD formats may not be available.

Symbol

Symbol preview for IQDH29NE2LM5CGATMA1

Footprint

Footprint preview for IQDH29NE2LM5CGATMA1

3D Model

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