1. Infineon
  2. Power
  3. MOSFET
  4. Silicon Carbide
  5. Discretes

Infineon IMZA65R039M1HXKSA1

CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device’s performance, robustness, and ease of use. The IMZA65R039M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation.Infineon’s SiC MOSFET in TO247 4-pin package reduces parasitic source inductance effects on the gate circuit enabling faster switching and increased efficiency.
Built by Infineon

The CAD models below were provided for download to Ultra Librarian by Infineon. All CAD formats may not be available.

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