1. Infineon
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  3. IGBT
  4. IGBT Discretes

Infineon IGU04N60TAKMA1

Hard-switching 600 V, 4 A single TRENCHSTOP™ IGBT3 in a TO251 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
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