1. Infineon
  2. Power
  3. GaN HEMT – Gallium Nitride Transistor

Infineon IGT60R070D1ATMA1

This product is not recommended for new designs. Please explore its successor IGT65R055D2The IGT60R070D1 enables a more compact topology and higher efficiency at higher frequency operation.It is certified through an extensive GaN-specific qualification process, exceeding industry standards.Housed in the bottom-side cooled HSOF-8 (TO-leadless) package, it is designed for optimal power dissipation required in modern data centers, server, telecom, renewables and numerous other applications.
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The CAD models below were provided for download to Ultra Librarian by Infineon. All CAD formats may not be available.

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