1. Infineon
  2. Power
  3. MOSFET
  4. N-Channel

Infineon ISZ056N03LF2SATMA1

Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 5.6 mOhm in a PQFN 3.3 x 3.3 package. This product addresses a broad range of applications from low- to high-switching frequency.Compared to the previous technology, the ISZ056N03LF2S achieves up to 40% RDS(on) improvement while having up to 60% FOM enhancement and excellent robustness.
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The CAD models below were provided for download to Ultra Librarian by Infineon. All CAD formats may not be available.

Symbol

Symbol preview for ISZ056N03LF2SATMA1

Footprint

Footprint preview for ISZ056N03LF2SATMA1

3D Model

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