1. Infineon
  2. Power
  3. MOSFET
  4. Silicon Carbide
  5. Discretes

Infineon IMYH200R050M1HXKSA1

The CoolSiC™ 2000 V 50 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, solar power optimizer, EV charging and energy storage systems.
Built by Infineon

The CAD models below were provided for download to Ultra Librarian by Infineon. All CAD formats may not be available.

Symbol

Symbol preview for IMYH200R050M1HXKSA1

Footprint

Footprint preview for IMYH200R050M1HXKSA1

3D Model

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